VEChannel Event Profile
ASME Nano Training Bootcamp
EVENT TYPE: Webcasts
CATEGORY: Science
EVENT DATE: July 10-14, 2006
EVENT TIME: July 10-14, 2006
DATE ENTERED: 0000-00-00 00:00:00
CONTACT INFO:
COMPANY NAME: ASME International
The ASME Nano Training Bootcamp is specifically organized to offer a detailed and tutorialbased account of advances in fundamentals related to Nanoscience in a wide variety of fields, and prospects for translating these advances into useful Nanotechnologies. The participants will be challenged with openended questions and opportunities in engineering nanosystems. Given by experts in academia and industry, the ASME Nano Training Bootcamp will provide intense sessions on characterization, solids and devices, and fluids/synthesis/ devices. We present a set of three interactive tools: CENEMS, SEST and CGTB. CENEMS is a user friendly tool that computes the surface charge density distribution on the surface of the conductors in a multiconductor system. CENEMS contains a graphical user interface which allows users to design multiconductor systems, including drawing conductors, specifying applied voltage and discretization level for the conductors. After running the simulation, users can immediately see the surface charge density distribution on the conductors. CENEMS solves the exterior potential problem and computes the surface charge density by using boundary integral equations and a boundary cloud method (BCM). SEST is an interactive tool developed to compute the strain effects on the thermal properties of crystalline silicon. The covalent bonding of the silicon atoms is modeled by the Tersoff interatomic potential. For a userspecified strain, the Helmholtz free energy, entropy, internal energy and the heat capacity are computed with the temperature varying from 0K to 1500K. CGTB is an interactive tool for computing the charge density distribution inside a MOS structure. A full tight binding description of the silicon atoms is coarsegrained to a 1D tight binding description by using the periodicity of the electronic properties in the planes parallel to the dielectric layer.
View This Event
Our Partners
